丝印代码：AR；20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

20 V, 2 A NPN medium power transistors

文件：1.18878 Mbytes Page：23 Pages

20 V, 2 A NPN medium power transistor

丝印代码：AR；20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified accor

20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified accor

丝印代码：BY；20 V, 2 A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Two current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical conduc

20 V, 2 A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Two current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical conduc

20 V, 2 A NPN medium power transistors

封装/外壳：3-PowerUDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 2A 3HUSON 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 V, 2 A NPN medium power transistors

丝印代码：BY；20 V, 2 A NPN medium power transistors

文件：762.73 Kbytes Page：14 Pages

封装/外壳：3-UDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 2A DFN2020D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个