NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 1 Amp continuous current * Ptot= 800 mW

NPN EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Complement to BC636/638/640

High Current Transistors

High Current Transistors NPN Silicon Features • These are Pb−Free Devices*

NPN medium power transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers.

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS High Current Transistor

High Current Transistors

High Current Transistors NPN Silicon

80 V, 1 A NPN medium power transistors

80 V, 1 A NPN medium power transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High current transistors

COMPLEMENTARY SILICON TRANSISTORS

NPN Type Plastic Encapsulated Transistor

FEATURE High current transistor

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers

NPN Silicon AF Transistors (High current gain High collector current)

NPN Silicon AF Transistors ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 (PNP)

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor Medium Power Transistors for audio and video amplifiers

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 100 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES High current transistors

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High IC, Complementary pair with BC640. Applications Driver stages of audio or video amplifiers applications.

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 80V 1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

GERMANIOVE TRANZISTORY

文件：1.9422 Mbytes Page：14 Pages

TRANS NPN 80V 1A TO-92

丝印代码：BC639-16；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications

丝印代码：BC639-16；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications

NPN medium power transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers.

NPN Epitaxial Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: BC639

80 V, 1 A NPN medium power transistors

NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications

Switching and Amplifier Applications

Switching and Amplifier Applications

NPN medium power transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers.

High Current Transistors

High Current Transistors NPN Silicon Features • These are Pb−Free Devices*

NPN Epitaxial Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: BC639

80 V, 1 A NPN medium power transistors

High Current Transistors

High Current Transistors NPN Silicon Features • These are Pb−Free Devices*

High Current Transistors

High Current Transistors NPN Silicon Features • These are Pb−Free Devices*

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS High Current Transistor

High Current Transistors

High Current Transistors NPN Silicon Features • These are Pb−Free Devices*

High Current Transistors

High Current Transistors NPN Silicon Features • These are Pb−Free Devices*

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 80V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Epitaxial Silicon Transistors

文件：346.38 Kbytes Page：3 Pages

NPN Epitaxial Silicon Transistors

文件：346.38 Kbytes Page：3 Pages

NPN Epitaxial Silicon Transistors

文件：346.38 Kbytes Page：3 Pages

中等功率双极型晶体管

NPN 中等功率晶体管

High Current Transistors

文件：98.51 Kbytes Page：4 Pages

High Current Transistors

文件：98.51 Kbytes Page：4 Pages

High Current Transistors

文件：98.51 Kbytes Page：4 Pages

Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners)

Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV / VTR tuners

Low voltage mixer FM IF system with filter amplifier and data switch

DESCRIPTION The SA639 is a low-voltage high performance monolithic FM IF system with high-speed RSSI incorporating a mixer/oscillator, two wideband limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), fast RSSI op amps, voltage re

Low voltage mixer FM IF system with filter amplifier and data switch

DESCRIPTION The SA639 is a low-voltage high performance monolithic FM IF system with high-speed RSSI incorporating a mixer/oscillator, two wideband limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), fast RSSI op amps, voltage re