丝印：BC547C；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

丝印：BC547C；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

丝印：BC547C；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

丝印：C547C；45 V, 100 mA NPN general-purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

NPN SILICON AMPLIFIER TRANSISTOR

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

Amplifier Transistors NPN Silicon

Features • Pb−Free Packages are Available*

Amplifier Transistors

NPN General Purpose Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) (1) Taped in ammo pack 4000 (Raster 2.54) (2) On request: in bulk 5000 (Ra

Amplifier Transistors

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN General Purpose Transistor

NPN General Purpose Transistors P/b Lead(Pb)-Free

NPN GENERAL PURPOSE TRANSISTOR

VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99 Sn above can meet RoHS environment substance directive request

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Elektronische Bauelemente

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage VCBO: BC546 80 V BC547 50 V BC548 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

丝印：C547C；NPN general purpose transistors

FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Amplifier Transistors

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage VCBO: BC546 80 V BC547 50 V BC548 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

丝印：C547C；45 V, 100 mA NPN general-purpose transistors

General Purpose NPN Transistors

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NPN Silicon Amplifier Transistor 625mW

文件：228.16 Kbytes Page：5 Pages

NPN General Purpose Transistor

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Amplifier Transistors NPN Silicon

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丝印：C547C；NPN general purpose transistors

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SMALL SIGNAL NPN TRANSISTORS

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NPN General Purpose Amplifier

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封装/外壳：TO-226-3，TO-92-3 长体 包装：卷带（TR） 描述：TRANS NPN 45V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP)

文件：53.1 Kbytes Page：1 Pages

TO-92, 50V, 0.1A, NPN Bipolar Transistor

中等功率双极型晶体管

Bipolar Transistors

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

Amplifier Transistors NPN Silicon

Features • Pb−Free Packages are Available*

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

Amplifier Transistors

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors NPN Silicon

Features • Pb−Free Packages are Available*

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 45V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Amplifier Transistor 625mW

文件：228.16 Kbytes Page：5 Pages

NPN Silicon Amplifier Transistor 625mW

文件：228.16 Kbytes Page：5 Pages

Amplifier Transistors NPN Silicon

文件：68.89 Kbytes Page：6 Pages

Amplifier Transistors

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Amplifier Transistors NPN Silicon

文件：68.89 Kbytes Page：6 Pages

Amplifier Transistors NPN Silicon

文件：68.89 Kbytes Page：6 Pages

Amplifier Transistors

文件：78.39 Kbytes Page：6 Pages

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

For measurement of electrical conductivity, dissolved solids and temperature in fresh water

Key Features On-line calculation of electrical conductivity Direct connection to datalogger Cable length up to 300m Can be used with multiplexers Typical Applications Water quality monitoring Calculation of stream discharge rate Tracking of water-borne pollutants in aquifers Descripti

Pipe Thread Sealant Tape 547, 1/4 in x 36 yds (6,3 mm x 32,9 m), Boxed

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Optional Device Lifter for Easy Package Removal

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Customer Specification

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