NPN general purpose transistors

FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557.

NPN Silicon Transistors

NPN Silicon Transistors

Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) (1) Taped in ammo pack 4000 (Raster 2.54) (2) On request: in bulk 5000 (Ra

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

65 V, 100 mA NPN general-purpose transistors

NPN GENERAL PURPOSE TRANSISTOR

VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99 Sn above can meet RoHS environment substance directive request

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

NPN Transistor

Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups A, B and C according to their current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) w

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Amplifier Transistors

NPN SILICON AMPLIFIER TRANSISTOR

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

General Purpose NPN Transistors

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：TRANS NPN 65V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT NPN 65V 0.1A 3-Pin TO-92

TO-92, 80V, 0.1A, NPN Bipolar Transistor

Bipolar Transistors

NPN Silicon Amplifier Transistor 625mW

文件：341.57 Kbytes Page：5 Pages

65 V, 100 mA NPN general-purpose transistors

65 V, 100 mA NPN general-purpose transistors

NPN General Purpose Transistor

文件：1.10078 Mbytes Page：5 Pages

65 V, 100 mA NPN general-purpose transistors

NPN general purpose transistors

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NPN Transistor

Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups A, B and C according to their current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) w

NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 65V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Amplifier Transistor 625mW

文件：341.57 Kbytes Page：5 Pages

1 pA Monolithic Electrometer Operational Amplifier

PRODUCT DESCRIPTION The AD546 is a monolithic electrometer combining the virtues of low (1 pA) input bias current with the cost effectiveness of a plastic mini-DIP package. Both input offset voltage and input offset voltage drift are laser trimmed, providing very high perfor mance for such a lo

1 pA Monolithic Electrometer Operational Amplifier

PRODUCT DESCRIPTION The AD546 is a monolithic electrometer combining the virtues of low (1 pA) input bias current with the cost effectiveness of a plastic mini-DIP package. Both input offset voltage and input offset voltage drift are laser trimmed, providing very high perfor mance for such a lo

1 pA Monolithic Electrometer Operational Amplifier

PRODUCT DESCRIPTION The AD546 is a monolithic electrometer combining the virtues of low (1 pA) input bias current with the cost effectiveness of a plastic mini-DIP package. Both input offset voltage and input offset voltage drift are laser trimmed, providing very high perfor mance for such a lo

1 pA Monolithic Electrometer Operational Amplifier

PRODUCT DESCRIPTION The AD546 is a monolithic electrometer combining the virtues of low (1 pA) input bias current with the cost effectiveness of a plastic mini-DIP package. Both input offset voltage and input offset voltage drift are laser trimmed, providing very high perfor mance for such a lo

1 pA Monolithic Electrometer Operational Amplifier

PRODUCT DESCRIPTION The AD546 is a monolithic electrometer combining the virtues of low (1 pA) input bias current with the cost effectiveness of a plastic mini-DIP package. Both input offset voltage and input offset voltage drift are laser trimmed, providing very high perfor mance for such a lo