High Voltage Darlington Transistors

High Voltage Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN DARL 100V 1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Voltage Darlington Transistors

High Voltage Darlington Transistors NPN Silicon

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 3200 V Mean forward current 705 A Surge current 6 kA

LOW POWER DUAL CMOS VOLTAGE COMPARATORS

DESCRIPTION These devices consist of two independent precision voltage comparators, designed to operate with single or dual supplies. These differential comparators use the STMicro electronics silicon lin MOS process giving them an excellent consumption-speed ratio. These devices are ideally

LOW POWER DUAL CMOS VOLTAGE COMPARATORS

DESCRIPTION These devices consist of two independent precision voltage comparators, designed to operate with single or dual supplies. These differential comparators use the STMicro electronics silicon lin MOS process giving them an excellent consumption-speed ratio. These devices are ideally

LOW POWER DUAL CMOS VOLTAGE COMPARATORS

DESCRIPTION These devices consist of two independent precision voltage comparators, designed to operate with single or dual supplies. These differential comparators use the STMicro electronics silicon lin MOS process giving them an excellent consumption-speed ratio. These devices are ideally