Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications???

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications

Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. ♦ These types are also available subdi vided into three groups -16, -25, and -40, according to their DC current

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : IC=800mA. • DC Current Gain : hFE=100~400 (VCE=1V, Ic=100mA). • For Complementary with PNP type BC327.

NPN SILICON AF MEDIUM POWER TRANSISTOR

THE BC337, BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327, BC328 RESPECTIVELY.

SWITCHING AND AMPLIFIER APPLICATIONS

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

Si-Epitaxial PlanarTransistors

General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

NPN General Purpose Transistor

SWITCHING AND AMPLIFIER APPLICATIONS

SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328

Amplifier Transistors

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage V(BR)CBO : BC337 50 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

45 V, 500 mA NPN general-purpose transistors

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for driver and output stage of audio amplifiers.

TO-92 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● Power dissipation

NPN general purpose transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: BC327. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP)

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain.

NPN Epitaxial Silicon Transistor

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Transistor

Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups -16, -25 and -40, according to their DC current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halog

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

Silicon NPN transistor in a TO-92(R) Plastic Package

Descriptions Silicon NPN transistor in a TO-92(R) Plastic Package. Features High current, complementary pair with BC327. Applications General purpose application and switching.

TRANSISTOR (NPN)

FEATURES • High Current : IC=800mA. • DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). • For Complementary with PNP type BC327.

SMALL SIGNAL NPN TRANSISTORS

APPLICATIONS n WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT n SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE

General Purpose Transistor

Features •NPN Silicon Planar Epitaxial Transistors. •Complementary Transistors for use in Driver and Output Stages of Audio Amplifiers

Switching and Amplifier Applications

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晶体管

NPN Transistor

NPN Silicon AF Transistors

SEMICONDUCTORS

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TRANSISTOR (NPN)

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NPN Transistors

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SWITCHING AND AMPLIFIER APPLICATIONS

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45 V, 500 mA NPN general-purpose transistors

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TRANSISTOR (NPN)

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EPITAXIAL PLANAR NPN TRANSISTOR

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NPN Plastic-Encapsulate Transistor

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SWITCHING AND AMPLIFIER APPLICATIONS

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TO-92 PACKAGE

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Amplifier Transistors NPN Silicon

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General Purpose Si-Epitaxial Planar Transistors

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Amplifier Transistors NPN SILICON

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Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

Amplifier Transistors

Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices

Amplifier Transistors

Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

SWITCHING AND AMPLIFIER APPLICATIONS

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering inform

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.

Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

NPN General Purpose Amplifier

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328

Amplifier Transistors

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Si-Epitaxial PlanarTransistors

General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP)

NPN general purpose transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: BC327. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.