Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon

NPN EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC239

Amplifier Transistors NPN Silicon

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.35 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: BC237 50V BC238/239 30V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Amplifier Transistors TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with T

Amplifier Transistors

Amplifier Transistors NPN Silicon

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 25V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 25V 0.1A TO-92

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 25V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 25V 0.1A TO-92

Amplifier Transistors

Amplifier Transistors NPN Silicon

Quad Single Supply Comparators

These comparators are designed for use in level detection, low–level sensing and memory applications in consumer automotive and industrial electronic applications. 1. Single or Split Supply Operation 2. Low Input Bias Current: 25 nA (Typ) 3. Low Input Offset Current: ±5.0 nA (Typ) 4. Low Inp

Quad Single Supply Comparators

These comparators are designed for use in level detection, low–level sensing and memory applications in consumer automotive and industrial electronic applications. 1. Single or Split Supply Operation 2. Low Input Bias Current: 25 nA (Typ) 3. Low Input Offset Current: ±5.0 nA (Typ) 4. Low Inp

Quad Single Supply Comparators

These comparators are designed for use in level detection, low–level sensing and memory applications in consumer automotive and industrial electronic applications. 1. Single or Split Supply Operation 2. Low Input Bias Current: 25 nA (Typ) 3. Low Input Offset Current: ±5.0 nA (Typ) 4. Low Inp