丝印代码：2310；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages