COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & SWITCHES

BC183, BC183L --> NPN BC213,BC213L --> PNP

COMPLEMENTARY SILICON AD SMALL SIGNAL AMPLIFIER & DRIVER

BC183, BC183L -- NPN\nBC213,BC213L  -- PNP

Low Level and General Purpose Amplifiers

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NPN General purpose Amplifier

NPN General Purpose Amplifier

TRANS NPN 30V 0.1A TO-92

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS NPN 30V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：管件 描述：TRANS NPN 30V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 30V 0.1A TO-9

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA