NPN General Purpose Amplifer

VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 100 mA PC Collector Dissipation (Ta=25°C) 350 mW TSTG , TJ Storage Junction Temperature Range - 55 ~ 150 °C

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：TRANS NPN 30V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：管件 描述：TRANS NPN 30V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Long useful life: up to 4000 h at 125 °C • Very low ESR and high ripple current • High voltages up to 80 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

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Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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PRINTED CIRCUIT PINS

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