NPN SILICON PLANAR EPITAXIAL TRANSISTORS

THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

Low Level and General Purpose Amplifiers

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NPN SILICON PLANAR EPITAXIAL TRANSISTORS

AF Pre and Driver Stages as well as for Universal Application.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

AF Pre and Driver Stages as well as for Universal Application.

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 165, 169

Thyristor logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

Precision Voltage Reference

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Precision Voltage Reference

文件：262.98 Kbytes Page：14 Pages