Silicon Tuning Diode

Silicon Tuning Diode • For SAT tuners • High capacitance ratio • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package

Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance)

Silicon Tuning Diode • For SAT-indoor-units • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to in-line matching assembly procedure

Silicon Tuning Diode

Silicon Tuning Diode

文件：76.24 Kbytes Page：7 Pages

Silicon Tuning Diode

文件：881.67 Kbytes Page：8 Pages

Silicon Tuning Diode

文件：881.67 Kbytes Page：8 Pages

封装/外壳：SC-79，SOD-523 包装：托盘 描述：DIODE TUNING 30V 20MA SC79-2 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

For SAT tuners

文件：858.94 Kbytes Page：7 Pages

封装/外壳：SC-80 包装：卷带（TR） 描述：DIODE TUNING 30V 20MA SCD80 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of