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位置：首页 > IC中文资料第5485页 > BB3

BB3晶体管资料

  • BB3别名：BB3三极管、BB3晶体管、BB3晶体三极管

  • BB3生产厂家：

  • BB3制作材料：UJT-P

  • BB3性质：

  • BB3封装形式：直插封装

  • BB3极限工作电压：

  • BB3最大电流允许值：0.001A

  • BB3最大工作频率：<1MHZ或未知

  • BB3引脚数：4

  • BB3最大耗散功率：

  • BB3放大倍数：

  • BB3图片代号：D-13

  • BB3vtest：0

  • BB3htest：999900

  • BB3atest：.001

  • BB3wtest：0

  • BB3代换 BB3用什么型号代替：

BB3价格

参考价格：￥28.1303

型号：BB300 品牌：BusBoard 备注：这里有BB3多少钱，2024年最近7天走势，今日出价，今日竞价，BB3批发/采购报价，BB3行情走势销售排行榜，BB3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BB3

Single Row Terminal Blocks Continued

TerminalBlocks-SingleRow CoverOptions-SingleRow

COOPER

科普斯株洲市科普斯科技有限公司

COOPER
BB301

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

Hitachi
BB301

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

Hitachi
BB301C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

Hitachi
BB301C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackag

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB301CAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackag

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB301M

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB301M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

Hitachi
BB301MAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB302C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi, Ltd.

日立公司

Hitachi
BB302M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi, Ltd.

日立公司

Hitachi
BB302M

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB302MBW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB303M

Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highforwardtransferadmittance;(|yfs|=42mStyp.atf=1kHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto250VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-

HitachiHitachi, Ltd.

日立公司

Hitachi
BB304

Silicon Epitaxial Planar Dual Capacitance Diodes

Features: Commoncathode

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1
BB304A

Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)

SiliconVariableCapacitanceDiode PreliminaryData ●ForFMtuners ●Monolithicchipwithcommoncathodeforperfecttrackingofbothdiodes ●Uniformsquarelawcharacteristics ●IdealHifituningdevicewhenusedinLow-distortionback-tobackconfiguration ●Color-codedcapacitancesubgr

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BB304C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandi

HitachiHitachi, Ltd.

日立公司

Hitachi
BB304C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB304CDW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB304M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandingt

HitachiHitachi, Ltd.

日立公司

Hitachi
BB304M

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandingt

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB304MDW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandingt

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB305C

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Superiorcrossmodulationcharacteristics. •Highgain;(PG=28dBtyp.atf=200MHz) •Widesupplyvoltagerange;Applicablewith5Vto9Vsupplyvoltage. •WithstandingtoESD;BuildinESDabsorbin

HitachiHitachi, Ltd.

日立公司

Hitachi
BB305C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Superiorcrossmodulationcharacteristics. •Highgain;(PG=28dBtyp.atf=200MHz) •Widesupplyvoltagerange;Applicablewith5Vto9Vsupplyvoltage. •WithstandingtoESD;BuiltinESDabsorbin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB305CEW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Superiorcrossmodulationcharacteristics. •Highgain;(PG=28dBtyp.atf=200MHz) •Widesupplyvoltagerange;Applicablewith5Vto9Vsupplyvoltage. •WithstandingtoESD;BuiltinESDabsorbin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB305M

Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Superiorcrossmodulationcharacteristics. •Highgain;(PG=28dBtyp.atf=200MHz) •Widesupplyvoltagerange;Applicablewith5Vto9Vsupplyvoltage. •WithstandingtoESD;BuiltinESDabsorbing

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB305M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Superiorcrossmodulationcharacteristics. •Highgain;(PG=28dBtyp.atf=200MHz) •Widesupplyvoltagerange;Applicablewith5Vto9Vsupplyvoltage. •WithstandingtoESD;BuildinESDabsorbing

HitachiHitachi, Ltd.

日立公司

Hitachi
BB305MEW-TL-E

Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Superiorcrossmodulationcharacteristics. •Highgain;(PG=28dBtyp.atf=200MHz) •Widesupplyvoltagerange;Applicablewith5Vto9Vsupplyvoltage. •WithstandingtoESD;BuiltinESDabsorbing

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB329

Si Epitaxial Planar Capacitance Diode?

TunerDiodes SiEpitaxialPlanarCapacitanceDiodeswithveryhigheffectivecapacitanceratiofortuningthewholeVHFrangeinTVreceivers,alsosuitedforCTV.

SEMTECH

Semtech Corporation

SEMTECH
BB329

SCHOTTKY DIODES

[ITTComponents] SCHOTTKYDIODES

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1
BB3553

Very Fast Buffer Amplifiers

VeryFastBufferAmplifiers

MaximMaximIntegrated

美信半导体

Maxim
BB3553AM

Very Fast Buffer Amplifiers

VeryFastBufferAmplifiers

MaximMaximIntegrated

美信半导体

Maxim
BB3554

WIDEBAND FST-SETTLING OPERATIONAL AMPLIFIER

WidebandFast-SettlingOperationalAmplifier

MaximMaximIntegrated

美信半导体

Maxim
BB3554AM

Wideband Fast-Settling Operational Amplifier

GeneralDescription TheBB3554/MX3554isaveryhighperformanceHybridoperationalamplifierswithJFETinputsandhigh-speed high-drivebipolaroutput.ThecombinationofrespectableDCspecificationswithunusuallycompleteAC,noise,andtransientspecificationsguaranteedoverawiderange

MaximMaximIntegrated

美信半导体

Maxim
BB3554AM

WIDEBAND FST-SETTLING OPERATIONAL AMPLIFIER

WidebandFast-SettlingOperationalAmplifier

MaximMaximIntegrated

美信半导体

Maxim
BB3554BM

WIDEBAND FST-SETTLING OPERATIONAL AMPLIFIER

WidebandFast-SettlingOperationalAmplifier

MaximMaximIntegrated

美信半导体

Maxim
BB3554BM

Wideband Fast-Settling Operational Amplifier

GeneralDescription TheBB3554/MX3554isaveryhighperformanceHybridoperationalamplifierswithJFETinputsandhigh-speed high-drivebipolaroutput.ThecombinationofrespectableDCspecificationswithunusuallycompleteAC,noise,andtransientspecificationsguaranteedoverawiderange

MaximMaximIntegrated

美信半导体

Maxim
BB3554SM

Wideband Fast-Settling Operational Amplifier

GeneralDescription TheBB3554/MX3554isaveryhighperformanceHybridoperationalamplifierswithJFETinputsandhigh-speed high-drivebipolaroutput.ThecombinationofrespectableDCspecificationswithunusuallycompleteAC,noise,andtransientspecificationsguaranteedoverawiderange

MaximMaximIntegrated

美信半导体

Maxim
BB3554SM

WIDEBAND FST-SETTLING OPERATIONAL AMPLIFIER

WidebandFast-SettlingOperationalAmplifier

MaximMaximIntegrated

美信半导体

Maxim
BB36931

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BB36933

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BB369S

Tuner Diodes

FEATURES ♦SiliconepitaxialplanarcapacitancediodeswithverywideeffectivecapacitancevariationfortunigtheVHFrangeandhyperbandintelevisiontuners. ♦Thesediodesareavailableassinglesorasmatchedsetsoftwoormoreunitsaccordingtothetrackingconditiondescribedinthet

GE

GE Industrial Company

GE
BB37931E

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BB37933

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BB38931

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BB38933

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BB39931

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BB39933

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BB300

300 and 400 tie point solderless “plug-in” breadboards provide a quick way to build and test circuits for experimentation or when learning electronics.

文件：330.64 Kbytes Page：3 Pages

BUSBOARDBusBoard Prototype Systems Ltd.

BUSBOARDBusBoard Prototype Systems Ltd.

BUSBOARD
BB3-2002

contact bounce release

文件：288.87 Kbytes Page：2 Pages

AECAssociated Equipment Corporation

联合联合设备公司

AEC
BB32C1

HC-49/US Microprocessor Crystals

文件：39.75 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
BB32C1

HC-49/US Microprocessor Crystals

文件：44.97 Kbytes Page：1 Pages

CALIBER

Caliber Electronics Inc.

CALIBER
BB32C3

HC-49/US Microprocessor Crystals

文件：39.75 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
BB32C3

HC-49/US Microprocessor Crystals

文件：44.97 Kbytes Page：1 Pages

CALIBER

Caliber Electronics Inc.

CALIBER
BB32C5

HC-49/US Microprocessor Crystals

文件：39.75 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
BB32C5

HC-49/US Microprocessor Crystals

文件：44.97 Kbytes Page：1 Pages

CALIBER

Caliber Electronics Inc.

CALIBER
BB32E1

HC-49/US Microprocessor Crystals

文件：39.75 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
BB32E1

HC-49/US Microprocessor Crystals

文件：44.97 Kbytes Page：1 Pages

CALIBER

Caliber Electronics Inc.

CALIBER
BB32E3

HC-49/US Microprocessor Crystals

文件：39.75 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
BB32E3

HC-49/US Microprocessor Crystals

文件：44.97 Kbytes Page：1 Pages

CALIBER

Caliber Electronics Inc.

CALIBER

BB3产品属性

  • 类型

    描述

  • 型号

    BB3

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB3供应商更多...

更新时间：2024-6-17 9:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威雅利发展有限公司
BB36763
FREESCA
07+
QFP
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
博速半导体（深圳）有限公司
BB3606BG
ADI/亚德诺
22+
66900
原封装
询价
千层芯半导体(深圳)有限公司
BB3656BG
BB
2019+
3600
CDIP-20
询价
深圳市宏捷佳电子科技有限公司
BB304CDW-TL
RENESAS
2023+
SOT323-4
50000
原装现货
询价
深圳市柯尔基电子有限公司
BB304MDW-TL
HIT
23+24
SOT143
28950
专营原装正品SMD二三极管,电源IC
询价
深圳市星佑电子有限公司
BB34460
MOT
00/01+
PLCC52
161
全新原装100真实现货供应
询价
深圳市澳亿芯电子科技有限公司
BB3507J
BB
98+
TO-99
850
普通
询价
深圳市恒创达实业有限公司
BB305CEW-TL
HITACHI
17+
SOT-343
6200
100%原装正品现货
询价
深圳市博浩通科技有限公司
BB3500B
BB
23+
TO
8890
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
深圳市金胜达微科技有限公司
BB304CDW-TL-E
RENESAS
21+
SOT343
15000
原厂订货价格优势,可开13%的增值税票
询价

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  • etc2
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  • SUMIDA
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