SURFACE MOUNT LOW LEAKAGE DIODE

Features • Small Surface Mount Package • Ultra-Low Reverse Leakage Current (5nA @ VR = 75V) • Low Capacitance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data • Case: SOD523 • Case Material: Molded Plastic

ULTRA LOW LEAKAGE SURFACE MOUNT DIODE

Ultra-low leakage surface mount diode. Ultra Low Leakage Current (5nA @ VR = 75V)\nSmall Surface Mount Package (1.6x0.8x0.6mm);

ULTRA LOW LEAKAGE SURFACE MOUNT DIODE

文件：373.88 Kbytes Page：5 Pages

ULTRA LOW LEAKAGE SURFACE MOUNT DIODE

文件：373.88 Kbytes Page：5 Pages

封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 85V 100MA SOD523 分立半导体产品 二极管 - 整流器 - 单

ULTRA LOW LEAKAGE SURFACE MOUNT DIODE

文件：373.88 Kbytes Page：5 Pages

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)