Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

Schottky barrier double diodes

丝印代码：AT120C；Schottky barrier double diodes

FEATURES •Low switching losses •Capability of absorbing very high surge current •Fast recovery time •Guard ring protected •Plastic SMD package. APPLICATIONS •Low power switched-mode power supplies •Rectification •Polarity protection. DESCRIPTION Planar Schottky barrier double diodes

Schottky barrier double diodes

Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. • Low switching losses\n• Capability of absorbing very high surge current\n• Fast recovery time\n• Guard ring protected\n• Plastic SMD package.\n• AEC-Q101 qualified;

Schottky barrier double diodes

Planar Schottky barrier double diodes encapsulated in a SOT223 Surface-Mounted Device (SMD) plastic package.

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 25V SOT223 分立半导体产品 二极管 - 整流器 - 阵列

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll