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BAS70_06价格
参考价格:¥0.1690
型号:BAS70-06 品牌:Taiwan Semi 备注:这里有BAS70_06多少钱,2025年最近7天走势,今日出价,今日竞价,BAS70_06批发/采购报价,BAS70_06行情走势销售排行榜,BAS70_06报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BAS70_06 | General-purposeSchottkydiodes 文件:137.22 Kbytes Page:20 Pages | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
General-purposeSchottkydiodes | ETC 知名厂家 | ETC | ||
Surfacemountschottkybarrierdiode FEATURES •Lowturn-onvoltage.Pb •Fastswitching.Lead-free •PNJunctionguardringfortransientandESDprotection. •Ultra-smallsurfacemountpackage. •Alsoavailableinleadfreeversion. APPLICATIONS •Highspeedswitchingapplications. •Circuitprotecting. •Voltageclamping. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SCHOTTKYDIODE FEATURES Powerdissipation PD:200mW(Tamb=25℃) Collectorcurrent IF:200mA Collector-basevoltage VR:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
200mWattsSurfaceMountSchottkyBarrierDiode FEATURES -Lowturn-onvoltage -Fastswitching -PNjunctionguardringfortransientandESDprotection | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
Schottkybarrier(double)diodes ■Features ●FastSwitchingSpeed ●Highbreakdownvoltage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
Schottkybarrierdoublediodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SMALLSIGNALSCHOTTKYDIODES DESCRIPTION Lowturn-onandhighbreakdownvoltagediodesintendedforultrafastswitchingandUHFdetectorsinhybridmicrocircuits. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
SurfaceMountSchottkyBarrierDiodes Features •LowTurn–onVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection Applications •Fastswitchesinthickandthinfilmcircuits | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SiliconSchottkyDiodes(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclampingHigh-leveldetectingandmixing) Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •eesaqualified •ESA/SCCDetailSpec.No.:5512/020 | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Description 70mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection. FeaturesandBenefits •LowTurn-OnVoltage •FastSwitching •PNJunctionGuardRingf | DIODESDiodes Incorporated 美台半导体 | |||
SchottkyDiodes FEATURES ♦Thesediodesfeatureverylowturn-onvoltageandfastswitching. ♦ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. | GE GE Industrial Company | |||
SurfacemountSchottky-BarrierSingle-/Double-Diodes •Powerdissipation310mW •Repetitivepeakreversevoltage70V •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 | |||
SiliconSchottkyDiode SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
SurfaceMountSchottkyBarrierDiodes SMALLSIGNALSCHOTTKYDIODES70mAMPERES70VOLTS Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentfor | WEITRON Weitron Technology | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowTurn-onVoltage •FastSwitching •PNJunctionGuardringforTransientandESDProtection. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
SurfaceMountSchottkyBarrierDiodes FEATURES •LowTurn-onVoltage •LowForwardVoltage-0.75V(Max)@IF=10mA •VeryLowCapacitance-LessThan2.0pF@0V •Forhighspeedswitchingapplication,circuitprotection | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SurfaceMountSchottkyBarrierDiode200mWatt DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
SMALLSIGNALSCHOTTKYDIODE,SINGLE&DUAL PRV:70Volts Io:200mA FEATURES: *Thesediodesfeatureverylowturn-onvoltage *Fastswitching *ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges *Pb/RoHSFree | EIC EIC discrete Semiconductors | |||
SWITCHINGDIODE FEATURES •LowTurn-onvoltage •Fastswitching •Alsoavailableinleadfreeversion | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
200mWSurfaceMountSchottkyBarrierDiode Features •Lowturn-onvoltage •Fastswitching •PNjunctionguardRingfortransient | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SmallSignalSchottkyDiodes FEATURES •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercialgrade •BaseP/N-HE3-Ro | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SWITCHINGDIODE SWITCHINGDIODE FEATURES ●Lowturn-onvoltage ●Fastswitching ●Alsoavailableinleadfreeversion | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
SchottkyDiodes Features •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •RoHScompliantpackage | BWTECH Bruckewell Technology LTD | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODES SMALLSIGNALSCHOTTKYDIODES0mAMPERES2070VOLTS DESCRIPTION Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhand | PACELEADERPACELEADER INDUSTRIAL 霈峰霈峰实业有限公司 | |||
Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. ●Ultra-smallsurfacemountpackage. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping. | DSK Diode Semiconductor Korea | |||
Schottkyrectifier FEATURES: ●LowForwardVoltage ●FastSwitching ●Alsoavailableinleadfreeversion | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
SWITCHINGDIODE FEATURES ●LowTurn-onvoltage ●Fastswitching ●Alsoavailableinleadfreeversion | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
SCHOTTKYBARRIERDIODE FEATURES Lowturn-onvoltage Fastswitching Alsoavailableinleadfreeversion | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | |||
SWITCHINGDIODE FEATURES Lowturn-onvoltage Fastswitching Alsoavailableinleadfreeversion | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | |||
SmallSignalSchottkyDiodes,SingleandDual FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercialgrade •BaseP/N-HE3- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
General-purposedualSchottkydiode 1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applications •Ultrahigh-speedswit | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
SWITCHINGDIODE FEATURES Lowturn-onvoltage Fastswitching Alsoavailableinleadfreeversion -CARforautomotiveandotherapplicationsrequiringuniquesite andcontrolchangerequirements;AEC-Q101qualifiedandPPAP capable. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | |||
Lowcapacitance,lowseriesinductanceandresistanceSchottkydiodes Description TheBAS70seriesuses70VSchottkybarrierdiodespackagedinSOD-123,SOD-323,SOD-523,SOT-23,SOT-323,SOT-323-6LorSOT-666.ThesediodesarespeciallysuitedforsignaldetectionandtemperaturecompensationinRFapplications. Features ■Verylowconductionlosses ■Neg | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
SmallSignalSchottkyDiodes FEATURES •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualifiedavailable(partnumberonrequest) •BaseP/N-G3-green,commercialgrade • | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SmallSignalSchottkyDiodes,SingleandDual FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SmallSignalSchottkyDiodes Features -MoldingcompoundmeetsUL94V-0 flammabilityrating. -Lowforwardvoltage. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
SchottkyDiodes Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingLiLiPutpackage | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SchottkyDiodes Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingLiLiPutpackage | VishayVishay Siliconix 威世科技威世科技半导体 | |||
General-purposedualSchottkydiode 1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andreco | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE FeaturesandBenefits LowTurn-OnVoltage FastSwitching PNJunctionGuardRingforTransientandESDProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAP | DIODESDiodes Incorporated 美台半导体 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE FeaturesandBenefits LowTurn-OnVoltage FastSwitching PNJunctionGuardRingforTransientandESDProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAP | DIODESDiodes Incorporated 美台半导体 | |||
SiliconSchottkyDiodeArray(General-purposediodeforhigh-speedswitchingCircuitprotectionVoltageclamping) SiliconSchottkyDiodeArray •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •AvailablewithCECCqualityassessment | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
SCHOTTKYBARRIERDIODE SCHOTTKYBARRIERDIODE FEATURES •LowTurn-onVoltage •FastSwitching | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
SchottkyDiode Features •LowTurn-onvoltage •Fastswitching •Ultra-smallsurfacemountpackage •Alsoavailableinleadfreeversion | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SchottkyBarrierRectifiers FEATURES •LowTurn-onvoltage •Fastswitching | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
150mWatt,70VoltSchottkyBarrierDiode Features •Ultra-SmallSurfaceMountPackage •LowturnonVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
SCHOTTKYDIODE FEATURES •LowTurn-onvoltage •Fastswitching | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
SurfaceMountSchottkyBarrierDiodes Features ◇Lowturn-onvoltage. ◇Fastswitching. ◇Ultra-smallsurfacemountpackage. ◇PNjunctionguardringfortransientand ◇ESDprotection. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowTurn-onVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5) | DIODESDiodes Incorporated 美台半导体 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowTurn-onVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5) | DIODESDiodes Incorporated 美台半导体 | |||
SurfaceMountSchottkyBarrierDiode200mWatt DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
SmallSignalSchottkyDiodes,Single&Dual Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SmallSignalSchottkyDiodes,Single&Dual Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SmallSignalSchottkyDiodes,Single&Dual Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountSchottkyBarrierDiodes FEATURES •LowTurn-onvoltage •LowForwardVoltage-0.75V(Max)@IF=10mA •VeryLowCapacitance-LessThan2.0pF@0V Forhighspeedswitchingapplication,circuitprotection | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
General-purposeSchottkydiodes | ETC 知名厂家 | ETC | ||
Schottkybarrierdoublediodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconSchottkyDiode(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectionandmixing | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
SMALLSIGNALSCHOTTKYDIODE DESCRIPTION SchottkybarrierdiodesencapsulatedeitherinSOT-323orSOD-323smallSMDpackages. Singleanddoublediodeswithdifferentpiningareavailable. FEATURESANDBENEFITS ■VERYSMALLCONDUCTIONLOSSES ■NEGLIGIBLESWITCHINGLOSSES ■LOWFORWARDVOLTAGEDROP ■SURFACEMOUNTDEVIC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |
BAS70_06产品属性
- 类型
描述
- 型号
BAS70_06
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
General-purpose Schottky diodes
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
SOT-23 |
16800 |
进口原装现货 |
|||
VISHAY/威世 |
SOT-23(SOT-23-3) |
6000 |
只做原装正品,卖元器件不赚钱交个朋友 |
||||
VISHAY/威世 |
21+ |
SOT-23(SOT-23-3) |
26880 |
公司只有原装 |
|||
DIODES |
24+ |
SOT-23 |
9000 |
原厂授权代理 价格绝对优势 |
|||
恩XP |
21+ |
NA |
56960 |
||||
VISHAY/威世 |
24+ |
SOT-23(SOT-23-3) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
恩XP |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Vishay(威世) |
22+ |
NA |
6500 |
原厂原装现货 |
|||
MCC |
24+ |
SOT23 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
Infineon/英飞凌 |
23+ |
SOT323-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
BAS70_06规格书下载地址
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BAS70_06数据表相关新闻
BAS70W原装现货放心询
BAS70W原装现货放心询
2025-1-2BAS40-05WH6327
进口代理
2023-8-24BAT 165 E6327
进口代理
2023-3-30BAS40E6327
BAS40E6327 製造商:Infineon 產品類型:肖特基二極體及整流器 RoHS:詳細資料 產品:SchottkyDiodes 安裝風格:SMD/SMT 封裝/外殼:SOT-23-3 配置:Single 技術:Si If-順向電流:120mA Vf-順向電壓:1V Ifsm-順向浪湧電流:200mA Ir-反向電流:1uA 最低工作溫度:-55C 最高工
2021-6-24BAS40-07E6327
BAS40-07E6327
2021-3-23BAT-02LRH
BAT-02LRH,全新原装当天发货或门市自取0755-82732291,
2019-3-22
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