BAS70_06价格

参考价格:¥0.1690

型号:BAS70-06 品牌:Taiwan Semi 备注:这里有BAS70_06多少钱,2025年最近7天走势,今日出价,今日竞价,BAS70_06批发/采购报价,BAS70_06行情走势销售排行榜,BAS70_06报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BAS70_06

General-purposeSchottkydiodes

文件:137.22 Kbytes Page:20 Pages

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

General-purposeSchottkydiodes

ETC

知名厂家

Surfacemountschottkybarrierdiode

FEATURES •Lowturn-onvoltage.Pb •Fastswitching.Lead-free •PNJunctionguardringfortransientandESDprotection. •Ultra-smallsurfacemountpackage. •Alsoavailableinleadfreeversion. APPLICATIONS •Highspeedswitchingapplications. •Circuitprotecting. •Voltageclamping.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SCHOTTKYDIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) Collectorcurrent IF:200mA Collector-basevoltage VR:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

200mWattsSurfaceMountSchottkyBarrierDiode

FEATURES -Lowturn-onvoltage -Fastswitching -PNjunctionguardringfortransientandESDprotection

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

Schottkybarrier(double)diodes

■Features ●FastSwitchingSpeed ●Highbreakdownvoltage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Schottkybarrierdoublediodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

SMALLSIGNALSCHOTTKYDIODES

DESCRIPTION Lowturn-onandhighbreakdownvoltagediodesintendedforultrafastswitchingandUHFdetectorsinhybridmicrocircuits.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SurfaceMountSchottkyBarrierDiodes

Features •LowTurn–onVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection Applications •Fastswitchesinthickandthinfilmcircuits  

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SiliconSchottkyDiodes(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclampingHigh-leveldetectingandmixing)

Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •eesaqualified •ESA/SCCDetailSpec.No.:5512/020

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Description 70mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection. FeaturesandBenefits •LowTurn-OnVoltage •FastSwitching •PNJunctionGuardRingf

DIODESDiodes Incorporated

美台半导体

DIODES

SchottkyDiodes

FEATURES ♦Thesediodesfeatureverylowturn-onvoltageandfastswitching. ♦ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges.

GE

GE Industrial Company

GE

SurfacemountSchottky-BarrierSingle-/Double-Diodes

•Powerdissipation310mW •Repetitivepeakreversevoltage70V •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

Diotec

SiliconSchottkyDiode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

SurfaceMountSchottkyBarrierDiodes

SMALLSIGNALSCHOTTKYDIODES70mAMPERES70VOLTS Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentfor

WEITRON

Weitron Technology

WEITRON

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowTurn-onVoltage •FastSwitching •PNJunctionGuardringforTransientandESDProtection.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

SurfaceMountSchottkyBarrierDiodes

FEATURES •LowTurn-onVoltage •LowForwardVoltage-0.75V(Max)@IF=10mA •VeryLowCapacitance-LessThan2.0pF@0V •Forhighspeedswitchingapplication,circuitprotection

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SurfaceMountSchottkyBarrierDiode200mWatt

DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

SMALLSIGNALSCHOTTKYDIODE,SINGLE&DUAL

PRV:70Volts Io:200mA FEATURES: *Thesediodesfeatureverylowturn-onvoltage *Fastswitching *ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC

SWITCHINGDIODE

FEATURES •LowTurn-onvoltage •Fastswitching •Alsoavailableinleadfreeversion

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

200mWSurfaceMountSchottkyBarrierDiode

Features •Lowturn-onvoltage •Fastswitching •PNjunctionguardRingfortransient

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SmallSignalSchottkyDiodes

FEATURES •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercialgrade •BaseP/N-HE3-Ro

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SWITCHINGDIODE

SWITCHINGDIODE FEATURES ●Lowturn-onvoltage ●Fastswitching ●Alsoavailableinleadfreeversion

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SchottkyDiodes

Features •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •RoHScompliantpackage

BWTECH

Bruckewell Technology LTD

BWTECH

SURFACEMOUNTSCHOTTKYBARRIERDIODES

SMALLSIGNALSCHOTTKYDIODES0mAMPERES2070VOLTS DESCRIPTION Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhand

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰实业有限公司

PACELEADER

Surfacemountschottkybarrierdiode

FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. ●Ultra-smallsurfacemountpackage. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

DSK

Diode Semiconductor Korea

DSK

Schottkyrectifier

FEATURES: ●LowForwardVoltage ●FastSwitching ●Alsoavailableinleadfreeversion

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

SWITCHINGDIODE

FEATURES ●LowTurn-onvoltage ●Fastswitching ●Alsoavailableinleadfreeversion

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

SCHOTTKYBARRIERDIODE

FEATURES Lowturn-onvoltage Fastswitching Alsoavailableinleadfreeversion

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY

SWITCHINGDIODE

FEATURES Lowturn-onvoltage Fastswitching Alsoavailableinleadfreeversion

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

SmallSignalSchottkyDiodes,SingleandDual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercialgrade •BaseP/N-HE3-

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

General-purposedualSchottkydiode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applications •Ultrahigh-speedswit

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SWITCHINGDIODE

FEATURES Lowturn-onvoltage Fastswitching Alsoavailableinleadfreeversion -CARforautomotiveandotherapplicationsrequiringuniquesite andcontrolchangerequirements;AEC-Q101qualifiedandPPAP capable.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

Lowcapacitance,lowseriesinductanceandresistanceSchottkydiodes

Description TheBAS70seriesuses70VSchottkybarrierdiodespackagedinSOD-123,SOD-323,SOD-523,SOT-23,SOT-323,SOT-323-6LorSOT-666.ThesediodesarespeciallysuitedforsignaldetectionandtemperaturecompensationinRFapplications. Features ■Verylowconductionlosses ■Neg

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SmallSignalSchottkyDiodes

FEATURES •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualifiedavailable(partnumberonrequest) •BaseP/N-G3-green,commercialgrade •

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SmallSignalSchottkyDiodes,SingleandDual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SmallSignalSchottkyDiodes

Features -MoldingcompoundmeetsUL94V-0 flammabilityrating. -Lowforwardvoltage.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

SchottkyDiodes

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingLiLiPutpackage

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SchottkyDiodes

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingLiLiPutpackage

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

General-purposedualSchottkydiode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andreco

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SURFACEMOUNTSCHOTTKYBARRIERDIODE

FeaturesandBenefits LowTurn-OnVoltage FastSwitching PNJunctionGuardRingforTransientandESDProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAP

DIODESDiodes Incorporated

美台半导体

DIODES

SURFACEMOUNTSCHOTTKYBARRIERDIODE

FeaturesandBenefits LowTurn-OnVoltage FastSwitching PNJunctionGuardRingforTransientandESDProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAP

DIODESDiodes Incorporated

美台半导体

DIODES

SiliconSchottkyDiodeArray(General-purposediodeforhigh-speedswitchingCircuitprotectionVoltageclamping)

SiliconSchottkyDiodeArray •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •AvailablewithCECCqualityassessment

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

SCHOTTKYBARRIERDIODE

SCHOTTKYBARRIERDIODE FEATURES •LowTurn-onVoltage •FastSwitching

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SchottkyDiode

Features •LowTurn-onvoltage •Fastswitching •Ultra-smallsurfacemountpackage •Alsoavailableinleadfreeversion

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

SchottkyBarrierRectifiers

FEATURES •LowTurn-onvoltage •Fastswitching

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

150mWatt,70VoltSchottkyBarrierDiode

Features •Ultra-SmallSurfaceMountPackage •LowturnonVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

SCHOTTKYDIODE

FEATURES •LowTurn-onvoltage •Fastswitching

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

SurfaceMountSchottkyBarrierDiodes

Features ◇Lowturn-onvoltage. ◇Fastswitching. ◇Ultra-smallsurfacemountpackage. ◇PNjunctionguardringfortransientand ◇ESDprotection.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowTurn-onVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)

DIODESDiodes Incorporated

美台半导体

DIODES

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowTurn-onVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)

DIODESDiodes Incorporated

美台半导体

DIODES

SurfaceMountSchottkyBarrierDiode200mWatt

DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

SmallSignalSchottkyDiodes,Single&Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SmallSignalSchottkyDiodes,Single&Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SmallSignalSchottkyDiodes,Single&Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountSchottkyBarrierDiodes

FEATURES •LowTurn-onvoltage •LowForwardVoltage-0.75V(Max)@IF=10mA •VeryLowCapacitance-LessThan2.0pF@0V Forhighspeedswitchingapplication,circuitprotection

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

General-purposeSchottkydiodes

ETC

知名厂家

Schottkybarrierdoublediodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

SiliconSchottkyDiode(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping)

SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectionandmixing

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

SMALLSIGNALSCHOTTKYDIODE

DESCRIPTION SchottkybarrierdiodesencapsulatedeitherinSOT-323orSOD-323smallSMDpackages. Singleanddoublediodeswithdifferentpiningareavailable. FEATURESANDBENEFITS ■VERYSMALLCONDUCTIONLOSSES ■NEGLIGIBLESWITCHINGLOSSES ■LOWFORWARDVOLTAGEDROP ■SURFACEMOUNTDEVIC

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

BAS70_06产品属性

  • 类型

    描述

  • 型号

    BAS70_06

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    General-purpose Schottky diodes

更新时间:2025-7-19 9:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
SOT-23
16800
进口原装现货
VISHAY/威世
SOT-23(SOT-23-3)
6000
只做原装正品,卖元器件不赚钱交个朋友
VISHAY/威世
21+
SOT-23(SOT-23-3)
26880
公司只有原装
DIODES
24+
SOT-23
9000
原厂授权代理 价格绝对优势
恩XP
21+
NA
56960
VISHAY/威世
24+
SOT-23(SOT-23-3)
6000
全新原装深圳仓库现货有单必成
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
Vishay(威世)
22+
NA
6500
原厂原装现货
MCC
24+
SOT23
9800
一级代理/全新原装现货/长期供应!
Infineon/英飞凌
23+
SOT323-3
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供

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