Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Modular application design kit (MADK) of IM818

EVAL-M1-IM818-A is an evaluation board for motor drive applications based on a 3-phase IPM. Combined with one of the available MADK control board options, it demonstrates Infineon's IPM technology for motor drives. The kit demonstrates Infineon’s IPM technology for motor drives. Main features o

AF 肖特基二极管

低 VF 肖特基二极管。 • 正向电流：0.5 A\n• 非常低的正向电压（典型值）0.45 V @ IF = 0.5 A)\n• 无铅（符合 RoHS 标准）封装;

Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Modular application design kit (MADK) of IM818

EVAL-M1-IM818-A is an evaluation board for motor drive applications based on a 3-phase IPM. Combined with one of the available MADK control board options, it demonstrates Infineon's IPM technology for motor drives. The kit demonstrates Infineon’s IPM technology for motor drives. Main features o

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC conversion, fast switching, protecting and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC conversion, fast switching, protecting and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

AF 肖特基二极管

中等功率 AF 肖特基二极管。 • 正向电流：0.5 A\n• 低电容，低反向电流\n• 无铅（符合 RoHS 标准）封装;

Sense2GoL pulse development kit

features ›Capability to detect motion, speed and direction of movement (approaching or retreating) ›Detection range of 18 m for human target at a power consumption

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

For high efficiency DC/DC conversion fast switching, protection and clamping applications

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

iMOTION™ Modular Application Design Kit

EVAL-M1-101T is an evaluation control board for motor control applications. The kit demonstrates Infineon’s motion control IC technology. Main features of the IMC101T-T038 Motion Control IC are:  MCE (Motion Control Engine) as ready-to-use solution for variable speed drives  Field oriented c

iMOTION™ Modular Application Design Kit

EVAL-M3-102T is an evaluation control board for motor control applications. The kit demonstrates Infineon’s motion control IC technology. Main features of the IMC102T-F064 Motion Control IC are: • MCE (Motion Control Engine) as ready-to-use solution for variable speed drives • Field oriented c

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

Sense2GoL pulse development kit

features ›Capability to detect motion, speed and direction of movement (approaching or retreating) ›Detection range of 18 m for human target at a power consumption

For high efficiency DC/DC conversion fast switching, protection and clamping applications

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

Single-channel isolated gate driver IC with adjustable DESAT and soft-off

Features • 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs • 40 V absolute maximum output supply voltage • ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current • Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver • Adjustme

丝印代码：3N；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

丝印代码：3N；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

Medium Power AF Schottky Diode

丝印代码：5B；Medium Power AF Schottky Diode

文件：856.69 Kbytes Page：8 Pages

丝印代码：3；Medium Power AF Schottky Diode

文件：856.69 Kbytes Page：8 Pages

封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 500MA SC79-2 分立半导体产品 二极管 - 整流器 - 单

Low VF Schottky Diode

文件：796.61 Kbytes Page：6 Pages

封装/外壳：SOD-882 包装：带盒（TB） 描述：DIODE SCHOTTKY 30V 500MA TSLP-2 分立半导体产品 二极管 - 整流器 - 单

Low VF Schottky Diode Array

文件：126.49 Kbytes Page：6 Pages

Low VF Schottky Diode Array

文件：126.49 Kbytes Page：6 Pages

Medium Power AF Schottky Diode

文件：63.28 Kbytes Page：6 Pages

Medium Power AF Schottky Diode

文件：63.28 Kbytes Page：6 Pages

Low VF Schottky Diode

文件：62.21 Kbytes Page：6 Pages

Low VF Schottky Diode

文件：791.23 Kbytes Page：6 Pages

Low VF Schottky Diode

文件：62.21 Kbytes Page：6 Pages

Schottky Rectifier Diode

文件：131.46 Kbytes Page：7 Pages