BAS30价格

参考价格:¥0.6702

型号:BAS3005A-02VH6327 品牌:Infineon 备注:这里有BAS30多少钱,2025年最近7天走势,今日出价,今日竞价,BAS30批发/采购报价,BAS30行情走势销售排行榜,BAS30报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

Modular application design kit (MADK) of IM818

EVAL-M1-IM818-A is an evaluation board for motor drive applications based on a 3-phase IPM. Combined with one of the available MADK control board options, it demonstrates Infineon's IPM technology for motor drives. The kit demonstrates Infineon’s IPM technology for motor drives. Main features o

Infineon

英飞凌

Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

Modular application design kit (MADK) of IM818

EVAL-M1-IM818-A is an evaluation board for motor drive applications based on a 3-phase IPM. Combined with one of the available MADK control board options, it demonstrates Infineon's IPM technology for motor drives. The kit demonstrates Infineon’s IPM technology for motor drives. Main features o

Infineon

英飞凌

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC conversion, fast switching, protecting and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Infineon

英飞凌

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC conversion, fast switching, protecting and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Infineon

英飞凌

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

Infineon

英飞凌

Sense2GoL pulse development kit

features ›Capability to detect motion, speed and direction of movement (approaching or retreating) ›Detection range of 18 m for human target at a power consumption

Infineon

英飞凌

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

Infineon

英飞凌

Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

Infineon

英飞凌

For high efficiency DC/DC conversion fast switching, protection and clamping applications

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

Infineon

英飞凌

iMOTION™ Modular Application Design Kit

EVAL-M1-101T is an evaluation control board for motor control applications. The kit demonstrates Infineon’s motion control IC technology. Main features of the IMC101T-T038 Motion Control IC are:  MCE (Motion Control Engine) as ready-to-use solution for variable speed drives  Field oriented c

Infineon

英飞凌

iMOTION™ Modular Application Design Kit

EVAL-M3-102T is an evaluation control board for motor control applications. The kit demonstrates Infineon’s motion control IC technology. Main features of the IMC102T-F064 Motion Control IC are: • MCE (Motion Control Engine) as ready-to-use solution for variable speed drives • Field oriented c

Infineon

英飞凌

For high efficiency DC/DC conversion fast switching, protection and clamping applications

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

Infineon

英飞凌

Sense2GoL pulse development kit

features ›Capability to detect motion, speed and direction of movement (approaching or retreating) ›Detection range of 18 m for human target at a power consumption

Infineon

英飞凌

Single-channel isolated gate driver IC with adjustable DESAT and soft-off

Features • 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs • 40 V absolute maximum output supply voltage • ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current • Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver • Adjustme

Infineon

英飞凌

High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

NEXPERIA

安世

High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

NEXPERIA

安世

AF 肖特基二极管

Infineon

英飞凌

Medium Power AF Schottky Diode

Infineon

英飞凌

Medium Power AF Schottky Diode

文件:856.69 Kbytes Page:8 Pages

Infineon

英飞凌

Medium Power AF Schottky Diode

文件:856.69 Kbytes Page:8 Pages

Infineon

英飞凌

AF 肖特基二极管

Infineon

英飞凌

封装/外壳:SC-79,SOD-523 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 30V 500MA SC79-2 分立半导体产品 二极管 - 整流器 - 单

Infineon

英飞凌

Low VF Schottky Diode

文件:796.61 Kbytes Page:6 Pages

Infineon

英飞凌

封装/外壳:SOD-882 包装:带盒(TB) 描述:DIODE SCHOTTKY 30V 500MA TSLP-2 分立半导体产品 二极管 - 整流器 - 单

Infineon

英飞凌

Low VF Schottky Diode Array

文件:126.49 Kbytes Page:6 Pages

Infineon

英飞凌

Low VF Schottky Diode Array

文件:126.49 Kbytes Page:6 Pages

Infineon

英飞凌

Medium Power AF Schottky Diode

文件:63.28 Kbytes Page:6 Pages

Infineon

英飞凌

Medium Power AF Schottky Diode

文件:63.28 Kbytes Page:6 Pages

Infineon

英飞凌

Low VF Schottky Diode

文件:62.21 Kbytes Page:6 Pages

Infineon

英飞凌

Low VF Schottky Diode

文件:791.23 Kbytes Page:6 Pages

Infineon

英飞凌

Low VF Schottky Diode

文件:62.21 Kbytes Page:6 Pages

Infineon

英飞凌

Schottky Rectifier Diode

文件:131.46 Kbytes Page:7 Pages

Infineon

英飞凌

BAS30产品属性

  • 类型

    描述

  • 型号

    BAS30

  • 制造商

    Thomas & Betts

  • 功能描述

    Battery Terminal(3/0)AWG Electro-Tin

更新时间:2025-11-4 13:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
QFN
11016
公司现货库存,支持实单
infineon technologies
23+
NA
358700
原装现货 库存特价/长期供应元器件代理经销
INFINEON
24+
n/a
25836
新到现货,只做原装进口
INFINEON/英飞凌
24+
SC79
60000
全新原装现货
INFINEON/英飞凌
24+
NA/
2300
优势代理渠道,原装正品,可全系列订货开增值税票
Infineon(英飞凌)
24+
SC792
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
INFINEON/英飞凌
2023+
SC79
27000
一级代理优势现货,全新正品直营店
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
INFINEON/英飞凌
21+
NA
12820
只做原装,质量保证
INFINEON/英飞凌
22+
N/A
33000
现货,原厂原装假一罚十!

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