SURFACE MOUNT LOW LEAKAGE DIODE

Features ● Ultra-Small Surface Mount Package ● Very Low Leakage Current ● Lead Free/RoHS Compliant (Note 2) ● Qualified to AEC-Q101 Standards for High Reliability

SURFACE MOUNT LOW LEAKAGE DIODE

Features • Ultra-Small Surface Mount Package • Very Low Leakage Current • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4)

75 V 开关二极管

The switching diode is designed for high speed switching applications. This device is housed in a SC-75 surface mount package which is ideal for automated insertion. • Low Leakage Current Applications\n• Medium Speed Switching Times\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant;

switching diode

丝印代码：ZY；Single low leakage current switching diode

文件：248.06 Kbytes Page：11 Pages

SURFACE MOUNT LOW LEAKAGE DIODE

文件：76.66 Kbytes Page：3 Pages

SURFACE MOUNT LOW LEAKAGE DIODE

Features • Ultra-Small Surface Mount Package • Very Low Leakage Current • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4)

SURFACE MOUNT LOW LEAKAGE DIODE

Features • Small Surface Mount Package • Ultra-Low Reverse Leakage Current (5nA @ VR = 75V) • Low Capacitance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data • Case: SOD523 • Case Material: Molded Plastic

SURFACE MOUNT LOW LEAKAGE DIODE

Features • Ultra-Small Surface Mount Package • Very Low Leakage Current • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4)

Switching Diode

Features • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

小信号开关二极管

分立

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE 100 Volts POWER 200mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2nA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363 plastic

SURFACE MOUNT LOW LEAKAGE DIODE

文件：76.66 Kbytes Page：3 Pages

SURFACE MOUNT LOW LEAKAGE DIODE

文件：82.22 Kbytes Page：3 Pages

封装/外壳：SOT-523 包装：管件 描述：DIODE GEN PURP 85V 215MA SOT523 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOT-523 包装：散装 描述：DIODE GEN PURP 85V 215MA SOT523 分立半导体产品 二极管 - 整流器 - 单

SURFACE MOUNT LOW LEAKAGE DIODE

文件：76.66 Kbytes Page：3 Pages

Switching Diode

文件：89.48 Kbytes Page：3 Pages

Switching Diode

文件：89.48 Kbytes Page：3 Pages

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

文件：167.29 Kbytes Page：5 Pages

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

文件：167.29 Kbytes Page：5 Pages

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

文件：167.29 Kbytes Page：5 Pages

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS