丝印代码：9C；Low-leakage diode

1. General description Low-leakage diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Switching time: max. trr = 3 μs • Low leakage current: max. IR = 5 nA • Repetitive peak reverse volt

Low-leakage diode

Low-leakage diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. • Switching time: max. trr = 3 µs\n• Low leakage current: max. IR = 5 nA\n• Repetitive peak reverse voltage: VRRM ≤ 85 V\n• Low capacitance typical: Cd = 2 pF\n• Ultra small and leadless SMD plastic package\n• Suitable for Automatic Optical Inspection (AOI) of solder joint\n• Qualified according to ;

封装/外壳：SOD-882 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 75V 325MA 2DFN 分立半导体产品 二极管 - 整流器 - 单

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS