CR timer

The BA225, BA225F, BA235, BA226, BA226F, and BA236 are monolithic ICs having independent monostable multivibrator circuits which consume very low current (0.75mA typ.). Using external resistors and capacitors, the timing control time can be set within a range from 0.01ms to 100ms. As the BA225,

CR timer

The BA225, BA225F, BA235, BA226, BA226F, and BA236 are monolithic ICs having independent monostable multivibrator circuits which consume very low current (0.75mA typ.). Using external resistors and capacitors, the timing control time can be set within a range from 0.01ms to 100ms. As the BA225,

(BA2xx) CR Timer

The BA225, BA225F, BA235, BA226, BA226F, and BA236 are monolithic ICs having independent monostable multivibrator circuits which consume very low current (0.75mA typ.). Using external resistors and capacitors, the timing control time can be set within a range from 0.01ms to 100ms.\nAs the BA225, BA2 1) As these are edge trigger types (BA225 / BA235: rising edge trigger types, BA226 / BA236: falling edge trigger types), there is no need for an input differentiating circuit.\n2) The dual type design enables delay timer configuration.\n3) Fewer attachments are required.\n4) Current dissipation is ;

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • E

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction t

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1)