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型号 功能描述 生产厂家 企业 LOGO 操作
B401B

Photoelectronic Detector

文件:60.58 Kbytes Page:2 Pages

HONEYWELL

霍尼韦尔

Ionization Detector

文件:53.22 Kbytes Page:2 Pages

HONEYWELL

霍尼韦尔

Photoelectronic detector

文件:90.04 Kbytes Page:2 Pages

HONEYWELL

霍尼韦尔

Sounder Bases

文件:106.84 Kbytes Page:4 Pages

SYSTEMSENSOR

Sounder Bases

文件:106.84 Kbytes Page:4 Pages

SYSTEMSENSOR

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

PANJIT

強茂

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

POLYFET

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件:388.71 Kbytes Page:6 Pages

NSC

国半

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件:388.71 Kbytes Page:6 Pages

NSC

国半

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件:388.71 Kbytes Page:6 Pages

NSC

国半

B401B产品属性

  • 类型

    描述

  • 型号

    B401B

  • 制造商

    GAMEWELL-FCI

  • 制造商全称

    GAMEWELL-FCI

  • 功能描述

    Photoelectronic Detector

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