SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 3.0 Ampere FEATURES • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic material carries UL recognition 94V-0 • For use in low voltage,h

丝印代码：LT；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES • For surface mounted application • Metal-semiconductor junction with guard ring • Epitaxial construction • Very low forward voltage drop • High current capability • Qualified according to JEDEC • For use in low voltage, high frequency inverters, free wheeling, and polarity protec

3A 200V Schottky diode

文件：322.216 Kbytes Page：2 Pages

SCHOTTKY BARRIER RECTIFIERS

文件：88.37 Kbytes Page：2 Pages

Surface Mount Schottky Barrier Rectifiers

文件：136.42 Kbytes Page：3 Pages

Schottky

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

1.3 關m Laser-Diode DIP Module

文件：44.39 Kbytes Page：3 Pages