SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 3.0 Amperes FEATURES • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic material carries UL recognition 94V-0 • For use in low voltage,high frequency

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

3A 200V Schottky diode

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SCHOTTKY BARRIER RECTIFIERS

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Schottky 

丝印代码：B3200AG；Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeli

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

1.3 關m Laser-Diode DIP Module

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