PNP Silicon Low Frequency Transistor

Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118

Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. Applications Medium power amplifier applications.

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power Amplifier Applications

isc Silicon NPN Power Transistor

DESCRIPTION • Small and slim package making it easy to make 2SB1205-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifie

PNP EPITAXIAL PLANAR TRANSISTOR

Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

Decade Capacitor

Features: • Verification and calibration of LCR meters • Capacitance measurement functions • Verification and calibration of multimeters • 50 pF to > 1 μF • Better than 1 pF resolution • Accuracy of ± (0.5 + 5 pF) • Low loss, leakage, dielectric absorption DESCRIPTION For decades of polys

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Continuous Hinge with Clamps, Type 4

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Junction Boxes

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Lift-Off-Cover, Type 12

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