Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Power Transistor (-60V, -3A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. ● Structure Epitaxial planar type PNP silicon transistor

Ultrasensitive Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switches

Description The A1185 and A1186 are ultrasensitive, two-wire, unipolar Hall effect switches. The operate point, BOP, can be field programmed, after final packaging of the sensor and placement into the application. This advanced feature allows the optimization of the sensor switching performance

Ultrasensitive Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switches

Features and Benefits ▪ Chopper stabilization ▫ Low switchpoint drift over operating temperature range ▫ Low sensitivity to stress ▪ Field programmable for optimized switchpoints ▪ On-chip protection ▫ Supply transient protection ▫ Reverse-battery protection ▫ On-board voltage regulator

Ultrasensitive Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switches

Description The A1185 and A1186 are ultrasensitive, two-wire, unipolar Hall effect switches. The operate point, BOP, can be field programmed, after final packaging of the sensor and placement into the application. This advanced feature allows the optimization of the sensor switching performance

Single Chip Low Cost Low Power RF-Transmitter

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High Sensitivity Hall Effect Latch

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