丝印代码：B1116；TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

丝印代码：B1116；TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

PNP SILICON TRANSISTORS

DESCRIPTION The 2SB1116/2SB1116A are disigned for use in driver and output stages of AF amplifier, general purpose applications.

丝印代码：B1116A；TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

丝印代码：B1116A；TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 30 (7/38) AWG Tinned Copper 0.012 b) Insulation 0.010 Wall, Nom. PVC 0.032 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 40.0

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 30 (7/38) AWG Tinned Copper 0.012 b) Insulation 0.010 Wall, Nom. PVC 0.032 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 40.0

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor

Drywall Punch

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Socket Outlets

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