Matched to Level One?셲 ICs SK70704/06 and SK70721/25

HDSL TRANSFORMER For Level One Chipsets Matched to Level One’s ICs SK70704/06 and SK70721/25 Excellent THD performance Maximum height .485 (12,32 mm) Approved to UL 1950 supplementary insulation require ments for working voltages up to 250 Vrms

Compact 1 x 2 Inch 10W Wide Input Range DC/DC Converters

Key Features:\n● 10W Output Power\n● UL Approved (File E245422)\n● 2:1 Input Voltage Range\n● 1,500 VDC Isolation\n● Meets EN55022 Class “A”\n● Compact 1 x 2 Inch Case\n● Single & Dual Outputs\n● Industry Standard Pin-Out

Plug-In Outlet Center Units

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Low Cost 1 x 2 Inch 10W Wide Input Range DC/DC Converters

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B1000RW SERIES

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Compact 1 x 2 Inch 10W Wide Input Range DC/DC Converters

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FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.