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B0202A

OBSOLETE Wire bondable silicon chip resistor, Al pads

TTELEC

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HITACHIHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HITACHIHitachi Semiconductor

日立日立公司

1.25A SCRs

Description The X02 SCR can be used as the on/off function in applications where topology does not offer high current for gate triggering. This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments.

STMICROELECTRONICS

意法半导体

2-W STEREO AUDIO POWER AMPLIFIER

文件:803.11 Kbytes Page:42 Pages

TI

德州仪器

2-W STEREO AUDIO POWER AMPLIFIER

文件:803.11 Kbytes Page:42 Pages

TI

德州仪器

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