位置:ATF-55143-TR2G > ATF-55143-TR2G详情

ATF-55143-TR2G中文资料

厂家型号

ATF-55143-TR2G

文件大小

164.04Kbytes

页面数量

20

功能描述

Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

射频GaAs晶体管 Transistor GaAs Single Voltage

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AVAGO

ATF-55143-TR2G数据手册规格书PDF详情

Description

Avago Technologies’ ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.

The combination of high gain, high linearity and low

noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range.

Features

● High linearity performance

● Single Supply Enhancement Mode Technology [1]

● Very low noise fgure

● Excellent uniformity in product specifcations

● 400 micron gate width

● Low cost surface mount small plastic package SOT-343 (4 lead SC-70)

● Tape-and-Reel packaging option available

● Lead Free Option Available

Specif cations

● 2 GHz; 2.7V, 10 mA (Typ.)

● 24.2 dBm output 3rd order intercept

● 14.4 dBm output power at 1 dB gain compression

● 0.6 dB noise fgure

● 17.7 dB associated gain

● Lead-free option available

Applications

● Low noise amplifer for cellular/PCS handsets

● LNA for WLAN, WLL/RLL and MMDS applications

● General purpose discrete E -PHEMT for other ultra low noise applications

ATF-55143-TR2G产品属性

  • 类型

    描述

  • 型号

    ATF-55143-TR2G

  • 功能描述

    射频GaAs晶体管 Transistor GaAs Single Voltage

  • RoHS

  • 制造商

    TriQuint Semiconductor

  • 技术类型

    pHEMT

  • 频率

    500 MHz to 3 GHz

  • 增益

    10 dB

  • 噪声系数

    正向跨导

  • gFS(最大值/最小值)

    4 S 漏源电压

  • 闸/源击穿电压

    - 8 V

  • 漏极连续电流

    3 A

  • 最大工作温度

    + 150 C

  • 功率耗散

    10 W

更新时间:2025-10-11 15:53:00
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