Description

The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers.

Features

• High Output Power:

27.5 dBm Typical P1 dB at 2.0 GHz

26.5 dBm Typical P1 dB at 4.0 GHz

• High Gain at 1 dB Compression:

12.5 dB Typical G1 dB at 2.0 GHz

9.5 dB Typical G1 dB at 4.0 GHz

• 35 Total Efficiency

• Emitter Ballast Resistors

• Hermetic, Metal/Beryllia Stripline Package