GENERAL DESCRIPTION

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology.

FEATURES

• High Speed: 35, 45, 55, and 70

• Battery Backup: 2V data retention

• Low power standby

• High-performance, low-power, CMOS double-metal process

• Single +5V (+10%) Power Supply

• Easy memory expansion with CE

• All inputs and outputs are TTL compatible