GENERAL DESCRIPTION

The Austin Semiconductor, Inc. Synchronous Burst SRAM family employs high-speed, low power CMOS designs that are fabricated using an advanced CMOS process.

FEATURES

• Fast access times: 8, 10, and 15ns

• Fast clock speed: 113, 100, and 66 MHz

• Fast clock and OE access times

• Single +3.3V +0.3V/-0.165V power supply (VDD)

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRTIE control and GLOBAL WRITE

• Three chip enables for simple depth expansion and address pipelining

• Clock-controlled and registered addresses, data I/Os and control signals

• Interally self-timed WRITE cycle

• Burst control pin (interleaved or linear burst)

• Automatic power-down

• Low capacitive bus loading

• Operating Temperature Ranges:

- Military -55°C to +125°C

- Industrial -40°C to +85°C