GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other features include CAS-before-RAS, RAS-only refresh, and Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM is fabricated using an advanced CMOS process to realize high bandwidth, low power consumption and high reliability. It may be used as main memory for high level computers, microcomputers and personal computers.

FEATURES

• Fast Page Mode Operation

• CAS-before-RAS Refresh Capability

• RAS-only and Hidden Refresh Capability

• Self-refresh Capability

• Fast Parallel Test Mode Capability

• TTL Compatible Inputs and Outputs

• Early Write or Output Enable Controlled Write

• JEDEC Standard Pinout

• Single +5V (±10%) Power Supply