位置:AS4C1024 > AS4C1024详情

AS4C1024中文资料

厂家型号

AS4C1024

文件大小

5819.8Kbytes

页面数量

11

功能描述

FAST PAGE MODE

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AUSTIN

AS4C1024数据手册规格书PDF详情

FEATURES

Industry standard pinout and timing All Inputs, outputs and clocks are fully TTI. compatible Single +5V±10 power supply Low power, 5mW standby: 175mW active, typical • Optional PACE MODE access cycle Refresh modes: RAS-ONLY, CAS-BEFORE-RAS, and HIDDEN • 512-cycle refresh distributed across 8ms Specifications guaranteed over full military temperature range (-55°C to +125°C)

GENERAL DESCRIPTION

The AS4C1024 883C is a randomly accessed solid-state memory containing 1,048,576 bits organized in a xl-bit configuration. During READ or WRITE cycles, each bit is uniquely addressed through the 20 address bits, which are entered 10 bits (A0-A9) at a time. RAS is used to latch the first 10 bits and CAS the latter 10 bits. A READ or WRITE cycle is selected with the WE input. A logic HIGH on WE dictates READ mode while a logic LOW on WE dictates WRITE mode. During a WRITE cycle, data in (D) is latched by the falling edge of WE or CAS, whichever occurs last. If WE goes LOW prior to CAS going LOW, the output (Q) remains open (High-Z) until the next CAS cycle. If WE goes LOW after data reaches Q. Q is activated and retains the selected cell data as long as CAS remains LOW (regardless of WE or RAS). This late WE pulse results in a READ-WRITE cycle. PAGE MODE operations allow faster data operations (READ, WRITE or READ-MODIFY-WRITE) within a row address (A0-A9) defined page boundary. The PAGE MODE cycle is always initiated with a row address strobed-in by RAS followed by a column address strobed-in by CAS. CAS may be toggled-in by holding RASLOW and strobing- in different column addresses, thus executing faster memory cycles. Returning RAS HIGH terminates the PAGE MODE operation. Returning RAS and CAS HIGH terminates a memory cycle and decreases chip current to a reduced standby level. Also, the chip is preconditioned for the next cycle during the RAS HIGH time. Memory cell data is retained in its correct state by maintaining power and executing any RAS cycle (READ, WRITE, RAS-ONLY, CAS-BEFORE-RAS, or HID- DEN refresh) so that all 512 combinations of RAS addresses (A0-A8) are executed at least every 8ms, regardless of sequence.

更新时间:2025-10-29 10:31:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Alliance Memory Inc.
22+
84FBGA (10.5x13.5)
9000
原厂渠道,现货配单
AllianceMemory
24+
SMD
768
动态随机存取存储器2G1.8V400Mhz128Mx16DDR2
Alliance Memory, Inc.
21+
4-XFBGA,WLCSP
5280
进口原装!长期供应!绝对优势价格(诚信经营
Alliance Memory, Inc.
24+
84-FBGA(10.5x13.5)
56200
一级代理/放心采购
Alliance Memory
2447
FBGA-84(10.5x13.5)
315000
162个/托盘一级代理专营品牌!原装正品,优势现货,长
ALLIANCE
25+
BGA-84
932
就找我吧!--邀您体验愉快问购元件!
Alliance
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Alliance
21+
-
12
全新原装鄙视假货
Alliance Memory, Inc.
23+
84-FBGA10.5x13.5
7300
专注配单,只做原装进口现货
ALLIANCE
23+origianl
DRAM
15800
DDR2, 2G, 128M x 16, 1.8V, 400Mhz, 84ball FBGA, Co