General Description

The AO4617 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AO4617 is Pb-free (meets ROHS & Sony 259 specifications). AO4617L is a Green Product ordering option. AO4617 and AO4617L are electrically identical.

Features

n-channel p-channel

VDS (V) = 40V -40V

ID = 6A (VGS=10V) -5A (VGS = -10V)

RDS(ON) RDS(ON)

< 32mΩ (VGS=10V) < 48mΩ (VGS = -10V)

ESD rating: 3000V (HBM)

UIS TESTED!

Rg,Ciss,Coss,Crss Tested