Functional description

The AS29LV800 is an 8 megabit, 3.0 volt Flash memory organized as 1 Megabyte of 8 bits/512Kbytes of 16 bits each. For flexible erase and program capability, the 8 megabits of data is divided into nineteen sectors: one 16K, two 8K, one 32K, and fifteen 64k byte sectors; or one 8K, two 4K, one 16K, and fifteen 32K word sectors. The ×8 data appears on DQ0–DQ7; the ×16 data appears on DQ0–DQ15. The AS29LV800 is offered in JEDEC standard 48-pin TSOP and 44-pin SOP packages. This device is designed to be programmed and erased in-system with a single 3.0V VCC supply. The device can also be reprogrammed in standard EPROM programmers.

Features

• Organization: 1M×8/512K×16

• Sector architecture

- One 16K; two 8K; one 32K; and fifteen 64K byte sectors

- One 8K; two 4K; one 16K; and fifteen 32K word sectors

- Boot code sector architecture—T (top) or B (bottom)

- Erase any combination of sectors or full chip

• Single 2.7-3.6V power supply for read/write operations

• Sector protection

• High speed 70/80/90/120 ns address access time

• Automated on-chip programming algorithm

- Automatically programs/verifies data at specified address

• Automated on-chip erase algorithm

- Automatically preprograms/erases chip or specified sectors

• Hardware RESET pin

- Resets internal state machine to read mode

• Low power consumption

- 200 nA typical automatic sleep mode current

- 200 nA typical standby current

- 10 mA typical read current

• JEDEC standard software, packages and pinouts

- 48-pin TSOP

- 44-pin SO; availability TBD

• Detection of program/erase cycle completion

- DQ7 DATA polling

- DQ6 toggle bit

- DQ2 toggle bit

- RY/BY output

• Erase suspend/resume

- Supports reading data from or programming data to a sector not being erased

• Low VCC write lock-out below 1.5V

• 10 year data retention at 150C

• 100,000 write/erase cycle endurance