DESCRIPTION

AMS3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE

● 30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V

● 30V/4.6A, RDS(ON) = 36mΩ @VGS = 4.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current capability

● SOT-23-3L package design