General description

350 W LDMOS power transistor for S-band applications in the frequency range from

2.7 GHz to 2.9 GHz.

Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for S-band operations

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz