General description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz

range.

Features and benefits

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (0.5 GHz to 1.4 GHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range