General description

160 W LDMOS power transistor for base station applications at frequencies from

2110 MHz to 2200 MHz.

Features and benefits

Excellent ruggedness

Excellent video-bandwidth enabling full band operation

High efficiency

Low thermal resistance providing excellent thermal stability

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

RF power amplifier for W-CDMA base stations and multi carrier applications in the

2110 MHz to 2200 MHz frequency range