General description

240 W LDMOS power transistor with enhanced video bandwidth for base station

applications at frequencies from 2110 MHz to 2200 MHz.

Features and benefits

 Excellent ruggedness

 Excellent video bandwidth enabling full band operation

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 RF power amplifiers for base stations and multi carrier applications in the

2110 MHz to 2200 MHz frequency range