General description

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the

1030 MHz to 1090 MHz range.

Features and benefits

 Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply

voltage of 48 V, an IDq of 100 mA, a tp of 50 s with  of 2 :

 Output power = 600 W

 Power gain = 17 dB

 Efficiency = 52

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (1030 MHz to 1090 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

Applications

 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the

1030 MHz to 1090 MHz frequency range