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D800BT90VI中文资料
D800BT90VI数据手册规格书PDF详情
GENERAL DESCRIPTION
The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The word wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.
DISTINCTIVE CHARACTERISTICS
■ Simultaneous Read/Write operations
— Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
— Zero latency between read and write operations
— Read-while-erase
— Read-while-program
■ Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
■ Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29DL800 device
■ High performance
— Access times as fast as 70 ns
■ Low current consumption (typical values at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or read-whileerase current
— 17 mA active program-while-erase-suspended current
— 200 nA in standby mode
— 200 nA in automatic sleep mode
— Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode
■ Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and fourteen 32 Kword sectors in word mode
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and fourteen 64 Kbyte sectors in byte mode
— Any combination of sectors can be erased
— Supports full chip erase
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing multiple program command sequences
■ Sector protection
— Hardware method of locking a sector to prevent any program or erase operation within that sector
— Sectors can be locked in-system or via programming equipment
— Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
— Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip
— Embedded Program algorithm automatically programs and verifies data at specified address
■ Minimum 1,000,000 program/erase cycles guaranteed per sector
■ Package options
— 44-pin SO
— 48-pin TSOP
— 48-ball FBGA
■ Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply flash standard
— Superior inadvertent write protection
■ Data# Polling and Toggle Bits
— Provides a software method of detecting program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow reading and programming in other sectors
— No need to suspend if sector is in the other bank
■ Hardware reset pin (RESET#)
— Hardware method of resetting the device to reading array data
D800BT90VI产品属性
- 类型
描述
- 型号
D800BT90VI
- 制造商
AMD
- 制造商全称
Advanced Micro Devices
- 功能描述
8 Megabit(1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AMD |
23+ |
BGA48 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
AMD |
9949+ |
BGA48 |
4265 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AMD |
23+ |
BGA48 |
8000 |
只做原装现货 |
|||
AMD |
23+ |
BGA48 |
7000 |
||||
AMD |
2450+ |
BGA |
6540 |
原装现货或订发货1-2周 |
|||
AMD |
24+ |
BGA48 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Littelfuse Inc. |
25+ |
RELAY GEN PURPOSE 10A |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Littelfuse |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MURATA/村田 |
23+ |
SIP-10P |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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