位置:AM29LV6402ML110RPHI > AM29LV6402ML110RPHI详情

AM29LV6402ML110RPHI中文资料

厂家型号

AM29LV6402ML110RPHI

文件大小

932.51Kbytes

页面数量

57

功能描述

128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O??Control

数据手册

下载地址一下载地址二到原厂下载

生产厂商

Advanced Micro Devices

简称

AMD超威半导体

中文名称

美国超威半导体公司官网

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AM29LV6402ML110RPHI数据手册规格书PDF详情

GENERAL DESCRIPTION

The Am29LV6402M consists of two 64 Mbit, 3.0 volt single power supply flash memory devices and is organized as 4,194,304 doublewords or 8,388,608 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Single power supply operation

— 3 volt read, erase, and program operations

■ VersatileI/OTM control

— Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V

■ Manufactured on 0.23 µm MirrorBitTM process technology

■ SecSi™ (Secured Silicon) Sector region

— 128-doubleword/256-word sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence

— May be programmed and locked at the factory or by the customer

■ Flexible sector architecture

— One hundred twenty-eight 32 Kdoubleword (64 Kword) sectors

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection

■ 100,000 erase cycles per sector

■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS

■ High performance

— 100 ns access time

— 30 ns page read times

— 0.5 s typical sector erase time

— 22 µs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates

— 4-doubleword/8-word page read buffer

— 16-doubleword/32-word write buffer

■ Low power consumption (typical values at 3.0 V, 5 MHz)

— 26 mA typical active read current

— 100 mA typical erase/program current

— 2 µA typical standby mode current

■ Package options

— 80-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES

■ Software features

— Program Suspend & Resume: read other sectors before programming operation is completed

— Erase Suspend & Resume: read/program other sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall multiple-word or byte programming time

— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices

■ Hardware features

— Sector Group Protection: hardware-level method of preventing write operations within a sector group

— Temporary Sector Unprotect: VID-level method of changing code in locked sectors

— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or erase cycle completion

更新时间:2025-5-11 15:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
AMD
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
AMD
24+
66
原装现货假一赔十
AMD
23+
19
6500
专注配单,只做原装进口现货
AMD
23+
19
6500
专注配单,只做原装进口现货

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Advanced Micro Devices 美国超威半导体公司

中文资料: 20889条

Advanced Micro Devices, Inc.(AMD)是一家全球领先的半导体公司,成立于1969年,总部位于美国加利福尼亚州的桑尼韦尔。AMD专注于设计和制造高性能计算、图形和视觉计算技术,产品涵盖处理器、图形卡、嵌入式系统等多个领域,广泛应用于个人电脑、工作站、服务器、游戏、数据中心及嵌入式设备等。 AMD在技术创新方面不断取得突破,推出了多个标志性的产品,如Ryzen系列处理器、EPYC服务器处理器、Radeon系列显卡等。公司以其优异的性能和能效比在市场上获得了良好的声誉,特别是在游戏和高性能计算领域受到广泛认可。 近年来,AMD积极推动开放架构和高效能计算领域的发展,致力于