位置:AS4C4M4F1-50JC > AS4C4M4F1-50JC详情
AS4C4M4F1-50JC中文资料
AS4C4M4F1-50JC数据手册规格书PDF详情
Functional description
The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications.
Features
• Organization: 4,194,304 words × 4 bits
• High speed
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
• Low power consumption
- Active: 908 mW max
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode
• Refresh
- 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0
- 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1
- RAS-only or CAS-before-RAS refresh or self-refresh
• TTL-compatible, three-state I/O
• JEDEC standard package
- 300 mil, 24/26-pin SOJ
- 300 mil, 24/26-pin TSOP
• Latch-up current ≥ 200 mA
• ESD protection ≥ 2000 mV
• Industrial and commercial temperature available
AS4C4M4F1-50JC产品属性
- 类型
描述
- 型号
AS4C4M4F1-50JC
- 制造商
ALSC
- 制造商全称
Alliance Semiconductor Corporation
- 功能描述
5V 4M×4 CMOS DRAM(Fast Page mode)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ALSC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||||
AS4C4M4F160JC |
3000 |
3000 |
|||||
all |
22+ |
500000 |
行业低价,代理渠道 |
||||
ALIANCE |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
ALLIANCE |
22+23+ |
SOJ |
38996 |
绝对原装正品全新进口深圳现货 |
|||
ALLIANCE |
1824+ |
SOJ-26 |
3100 |
原装现货专业代理,可以代拷程序 |
|||
AllianceMemoryInc |
2022+ |
300 |
全新原装 货期两周 |
||||
ALLIANCE专 |
23+ |
SOJ-26 |
7300 |
专注配单,只做原装进口现货 |
|||
ALLIANCE专 |
23+ |
SOJ-26 |
7300 |
专注配单,只做原装进口现货 |
AS4C4M4F1-50JC 资料下载更多...
AS4C4M4F1-50JC 芯片相关型号
- AS4C4M4F1-60JC
- GS815018AB-333I
- GS815036AB-333
- GS816118BT-150
- GS816218B-150
- GS816218BB-150V
- GS816218BB-200
- GS8322Z72GC-250V
- GS8342D36GE-250I
- GS8342S08GE-167
- GS8342S08GE-250I
- GS8342T18GE-300I
- GS8342T36GE-250
- GS84036B-166
- GS84036B-180
- GS8662D18GE-167
- GS8662S09GE-333
- GS8662S18GE-167
- GS8662T09GE-167
- GS8662T09GE-200
- GS88118AD-133
- GS88118BGT-150V
- GS88132BT-150I
- GS88218BB-150IV
- GS88236BGB-200V
- GS88237AB-133I
- GS88237BGB-200IV
- GS88237BGD-250V
- GS88436B-166
- GS88436B-180
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Alliance Semiconductor Corporation
Alliance Memory is a fabless semiconductor manufacturer of legacy and new technology memory products such as SRAM, DRAM, FLASH and Storage ICs that are pin-for-pin drop-in replacements for memory ICs supplied from Micron, Samsung, Infineon/Cypress, Macronix, Winbond, ISSI, Nanya, Hynix, an