Description

Alpha’s three-stage reactively-matched Ka band GaAs MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB associated gain over the band 37–39 GHz.The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where power and gain are required.

Features

■ Single Bias Supply Operation (5.5 V)

■ 18 dB Typical Small Signal Gain

■ 19 dBm Typical P1 dB Output Power at 39 GHz

■ 0.25 µm Ti/Pd/Au Gates

■ 100 On-Wafer RF and DC Testing

■ 100 Visual Inspection to MIL-STD-883 MT 2010