Description

Alpha’s two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15 power added efficiency at 31 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attach processes.

Features

■ Single Gate and Drain Biases

■ 25 dBm Typical P1 dB Output Power at 31 GHz

■ 11 dB Typical Small Signal Gain

■ 0.25 µm Ti/Pd/Au Gates

■ 100 On-Wafer RF and DC Testing

■ 100 Visual Inspection to MIL-STD-883 MT 2010