FEATURES AND BENEFITS

• Power-Thru integrated isolated bias

□ No high-side bootstrap or external secondary-side bias

• Bipolar drive output, with adjustable regulated positive rail

• Regulated 3.3 V low power bias output

• 50 ns propagation delay, with excellent device-to-device

matching of 5 ns

• Separate drive output pins: pull-up (2.8 Ω) and pull-down

(1.0 Ω)

• Supply voltage 10.5 V < VDRV < 13.2 V

• Undervoltage lockout on primary VDRV and secondary VSEC

• Enable pin with fast response

• Overtemperature protection

• CMTI > 100 V/ns dv/dt immunity

• Creepage distance > 8 mm

• Distance-through-insulation DTI ≥ 450 μm

• Safety regulatory approvals (pending)

□ 5.7 kV RMS VISO per UL 1577

□ 8 kV pk VIOTM maximum transient isolation voltage

per VDE0884-11

□ 630 V pk maximum working isolation voltage

DESCRIPTION

The AHV85111 isolated gate driver is optimized for driving

GaNFETs in multiple applications. An isolated dual positive/

negative output bias supply is integrated into the driver device,

eliminating external gate drive auxiliary bias supply or high-side

bootstrap. The bipolar output rails with adjustable and regulated

positive rail improves dv/dt immunity, greatly simplifies the

system design, and reduces EMI through reduced total commonmode

(CM) capacitance. It also allows the driving of a floating

switch in any location in a switching power topology.

The driver has fast propagation delay and high peak source/

sink capability to efficiently drive GaNFETs in high-frequency

designs. High CMTI combined with isolated outputs for both

bias power and drive make it ideal in applications requiring

isolation, level-shifting, or ground separation for noise immunity.

The device is available in a compact low-profile surface-mount

NH package. Several protection features are integrated, including

undervoltage lockout on primary and secondary bias rails,

internal pull-down on IN pin and OUTPD pin, fast response

enable input, and overtemperature shutdown.