General Description

AFP2325A, P-Channel enhancement mode

MOSFET, uses Advanced Trench Technology

to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low

voltage power management, and low in-line

power loss are needed in commercial industrial

surface mount applications.

Features

-100V/-1.0A,RDS(ON)=600mΩ@VGS=-10V

-100V/-0.5A,RDS(ON)=650mΩ@VGS=-4.5V

Super high density cell design for extremely

low RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23 package design