GENERAL DESCRIPTION

ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications.

FEATURES

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -3.50V +/- 0.05V

• Nominal RDS(ON) @ VGS = 0.0V of 540Ω

• Matched MOSFET-to-MOSFET characteristics

• Tight lot-to-lot parametric control

• Low input capacitance

• VGS(th) match (VOS) — 20mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

APPLICATIONS

• Functional replacement of Form B (NC) relay

• Zero power fail safe circuits

• Backup battery circuits

• Power failure detector

• Fail safe signal detector

• Source followers and buffers

• Precision current mirrors

• Precision current sources

• Capacitives probes

• Sensor interfaces

• Charge detectors

• Charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors

• Sample and Hold

• Alarm systems

• Current multipliers

• Analog switches

• Analog multiplexers

• Voltage comparators

• Level shifters